Unlock your data centre’s performance


Applications today need the right storage to process large amounts of data efficiently.

With speeds of up to 3,200 Mbps, Samsung’s DRAM can tackle the most exacting workloads.  Utiliising their TSV RDIMM technology Samsung’s DRAM delivers up to 128Gb capacity while simultaneously reducing power consumption and heat generation by a quarter.

Exponential data growth is causing slow performance and higher operational costs in many organisations. The most widely used semiconductor memory in current generation computers, DRAM offers very high packing densities, low power consumption, and sufficiently high data read/write speeds.

Samsung’s latest generation high capacity DRAM memory is not just faster and more power-efficient, its high capacity enables higher workloads processing while optimizing the total cost of ownership.

As Samsung’s SERVER ENTERPRISE PARTNER OF THE YEAR 2017, M2M supply the products and expertise to help you clients achieve the outstanding performance and efficiency needed to meet the growing workloads in today’s enterprise data centres.

Tackle heavy workload demands with fast speed

Samsung’s advanced DRAM enables your data centres to handle increasing data traffic and multiple applications. Processing large workloads with outstanding speed, Samsung server DRAM also offers fast recovery from unexpected failures.

Samsung DDR4 RDIMM with 2xnm process technology enables initial bandwidth up to 2,400 Mbps, and has the technology to achieve up to the JEDEC-defined 3,200 Mbps, double the speed of DDR3.

Achieve unprecedented capacity with TSV technology

Samsung’s advanced process and package technology delivers greater capacity with fewer DRAMs in the server. Samsung DRAM is designed to reduce physical space requirements and related costs.

Samsung equips DDR4 with 8Gb chips doubling the density of DDR3’s 4Gb. Using the 8Gb chips, TSV RDIMM provides a maximum capacity of 128GB.

The high capacity RDIMM can also replace LRDIMM that was widely used for its high capacity despite its relatively slow speed.

Lower costs with efficient power consumption

With its unique 2xnm and TSV technology, Samsung server DRAM consumes less power without compromising its performance. Low power consumption leads to less heat generation, and these benefits mean a large reduction in energy and cooling costs.

Samsung DDR4’s 2xnm technology and low operating voltage of 1.2V achieve approximately 26% higher energy efficiency than DDR3. In memory module as a result, Samsung TSV RDIMM reduces both power consumption and heat generation by around 28%.

Secure reliable server performance

To meet the demands of data centres as they run more critical systems and process more traffic, Samsung DRAM provides high reliability and availability for a longer period of time without failure.

The DDR4’s enhanced RAS feature detects and notifies when data transfer errors occur. This means that Samsung DRAM delivers the superior data reliability and signal integrity necessary for mission-critical enterprise applications.

* RAS : Reliability, Availability and Serviceability



Samsung DDR4 Brochure


Samsung TSV Technology Brochure



White Papers & Guides


Data Processing with Samsung Advanced DRAM and SSD Solutions Whitepaper


Whitepaper Boosting the Performance of S4HANA


Ultra-Low Latency with Samsung Z-NAND SSD.


The New Norm for Escalating PC_Memory Demand.


Samsung Multistream Technology


Samsung Memory Solutions for Enterprise Computing


Samsung Auto Stream Technology for MultiStream SSD



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